半導體晶圓的物理分析| Thermo Fisher Scientific - TW

製程控制和半導體晶圓的物理結構分析採用各種高解析度光學/電子/離子顯微鏡和特定的 ... 新技術開發完成並在產能增長期間排除系統性製程缺陷後，大批量生產便需要非常 ... PopularApplications&TechniquesShopAllProductsServicesSupport Signin QuickOrder     Search ThermoFisherScientific SearchAll Search Home›Industrial&AppliedSciences›Manufacturing&Processing›Manufacturing&ProcessingLearningCenter›ElectronicsInformation›SemiconductorAnalysis,Imaging,andMetrologyInformation›PhysicalAnalysisofSemiconductorWafersPhysicalAnalysisofSemiconductorWafersSeeNavigation‹SemiconductorAnalysis,Imaging,andMetrologyInformationSemiconductorFabricationOverview ›PhysicalAnalysisofSemiconductorWafers ›ChemicalAnalysisofSemiconductorWaferFabsEnvironmentandQualityControl › Reducingprocessinducedyieldlossthroughwaferfabricationcontrol Controloftheprocessstepsandwaferenvironmenttomeetthedailychallengesofroutinewafercompliancerequirestheuseofmanydiversecharacterizationtechniques,includingelectronandionmicroscopy.HereyouwilllearnaboutThermoFisherScientificelectronmicroscopesandtheirusetohelpyoucontrolprocessstepsthroughoutsemiconductormanufacturingtoensureyouarereachingthehighestyieldpossible. Theroleofelectronandionmicroscopesforphysicalanalysisofsemiconductorwafers Controllingprocessstepsandanalyzingphysicalstructuresofthesemiconductorwaferemploysvarioushighresolutionoptical/electron/ionmicroscopesandspecificspectrometers/diffractometers.Table1listsmanyofthesetechnologies,whileTable2illustratestheiruseinsemiconductorfabrication. Table1.Exampletechnologiesforphysicalanalysisofsemiconductorwafers Optical,electronandionmicroscopesSpectrometersanddiffractometersOpticalMicroscopy(OM)AugerElectronEmissionSpectroscopy(AES)ScanningElectronMicroscopy(SEM)SecondaryIonMassSpectroscopy(SIMS)TransmissionElectronMicroscopy(TEM)X-rayPhotoelectronSpectroscopy(XPS)FocusedIonBeam(FIB)X-rayFluorescenceSpectroscopy(XRF) X-rayDiffractionSpectroscopy(XRD) µ-RamanSpectroscopy Table2:Overviewofphysicalandchemicaldeviceanalysisinsemiconductordevicemanufacturing TypeofdeviceanalysisAnalyticaltechniqueAnalyticalrequirementsTypicalperformanceDevicedimensions(3D)FIB-SEMSpatialresolution,contrast,nodamage<1nm@1KeV(S)TEMSpatialresolution,contrast,nodamage<0.1nm@80KeVAFMSpatialresolution,nodamage ChemicalcompositionDopantprofilesAES,XPS,ToF-SIMSSurfaceanalysis,lateral&depthresolution,chemicalsensitivity<20nm,~0.1%chemicalsensitivity(AES)<100nmlateral,<1nmdepthresolution,ppm/ppt/1e15at/cm3chemicalsensitivity,(ToF-SIMS)SIMS,SEM-EDX,STEM-EDX,XRFBulkanalysis,lateral&depthresolution,chemicalsensitivity<2nm,~0.01-0.1%chemicalsensitivity(STEM-EDX)AtomProbeTomography3Danalysis,spatialresolutionSingleatomsdetected,<0.1nmspatialresolutionChemicalcontaminationVPD-TXRF,VPD-ICP-MSChemicalsensitivity,reproducibility<1e10at/cm2,~1E7at/cm2detectionlimitsToF-SIMSChemicalsensitivity,spatialresolution,reproducibility<100nmlateral,<1nmdepthresolution,<1E8at/cm2detectionlimitsStrain,ThermomechanicalpropertiesMicroRamanspectroscopyPED-STEM,CBED-STEMNano-indentation,PorosimeterSensitivity,precision,spatialresolution ElectricalfaultisolationSEM-nanoproberAFM-nanoproberLightemissionmicroscope(EMM)Laser(e.g.,OBIRCH)LockinThermography(LIT)Faultisolationsensitivityandspatialresolutionofthefaultisolation Today’swaferfabricationmustdealwithshrinkinggeometries,newmaterials,andnovelarchitectures,criticaldevicestructuresaresimplytoosmalltoseeorcharacterizewithexistingtools.Asthedevicedimensionsshrink,therequirementsforimageresolutionanddetectorsensitivitybecomemorestringenttoo:tovisualizetransistorstructuresina