List of semiconductor fabrication plants - Wikipedia

This is a list of semiconductor fabrication plants. A semiconductor fabrication plant is ... Some Pure Play foundries like TSMC offer IC design services, and others, ... Listofsemiconductorfabricationplants FromWikipedia,thefreeencyclopedia Jumptonavigation Jumptosearch Thislistisincomplete;youcanhelpbyaddingmissingitems.(September2011) Thisisalistofsemiconductorfabricationplants.Asemiconductorfabricationplantiswhereintegratedcircuits(ICs),alsoknownasmicrochips,aremanufactured.TheyareeitheroperatedbyIntegratedDeviceManufacturers(IDMs)whodesignandmanufactureICsin-houseandmayalsomanufacturedesignsfromdesign-only(fablessfirms),orbyPurePlayfoundries,thatmanufacturedesignsfromfablesscompaniesanddonotdesigntheirownICs.SomePurePlayfoundrieslikeTSMCofferICdesignservices,andothers,likeSamsung,designandmanufactureICsforcustomers,whilealsodesigning,manufacturingandsellingtheirownICs. Contents 1Glossaryofterms 2Openplants 3Closedplants 4Seealso 5References 6Externallinks Glossaryofterms[edit] Wafersize–largestwaferdiameterthatafacilityiscapableofprocessing.(Semiconductorwafersarecircular.) Processtechnologynode–sizeofthesmallestfeaturesthatthefacilityiscapableofetchingontothewafers. Productioncapacity–amanufacturingfacility'snameplatecapacity.Generallymaxwafersproducedpermonth. Utilization–thenumberofwafersthatamanufacturingplantprocessesinrelationtoitsproductioncapacity. Technology/products–Typeofproductthatthefacilityiscapableofproducing,asnotallplantscanproduceallproductsonthemarket. Openplants[edit] Operatingfabsinclude: Company Plantname Plantlocation Plantcost(inUS$billions) Startedproduction Wafersize(mm) Processtechnologynode(nm) Productioncapacity(Wafers/Month) Technology/products UMC-HeJian Fab8N China,Suzhou 0.750,[1]1.2,+0.5 2003,May[1] 200 4000–1000,500,350,250,180,110 77,000 Foundry UMC Fab6A Taiwan,Hsinchu 0.35[1] 1989[1] 150 450 31,000 Foundry UMC Fab8AB Taiwan,Hsinchu 1[1] 1995[1] 200 250 67,000[2] Foundry UMC Fab8C Taiwan,Hsinchu 1[1] 1998[1] 200 350–110 37,000 Foundry UMC Fab8D Taiwan,Hsinchu 1.5[1] 2000[1] 200 90 31,000 Foundry UMC Fab8E Taiwan,Hsinchu 0.96[1] 1998[1] 200 180 37,000 Foundry UMC Fab8F Taiwan,Hsinchu 1.5[1] 2000[1] 200 150 40,000 Foundry UMC Fab8S Taiwan,Hsinchu 0.8[1] 2004[1] 200 350–250 31,000 Foundry UMC Fab12A Taiwan,Tainan 4.65,4.1,6.6,7.3[1] 2001,2010,2014,2017[1] 300 28,14 87,000[2] Foundry UMC Fab12i Singapore 3.7[1] 2004[1] 300 130–40 53,000 Foundry UMC-UnitedSemiconductor Fab12X China,Xiamen 6.2 2016 300 55–28 19,000-25,000(2021) Foundry UMC-USJC(formerlyMIFS)(formerlyFujitsu) Fab12M(originalFujitsuinstallations)[3] Japan,MiePrefecture 1974 150,200,300[4] 90–40 33,000 Foundry TexasInstruments FFAB Germany,Bavaria,Freising 200 1000–180 TexasInstruments(formerlyNationalSemiconductor) MFAB[5] USA,Maine,SouthPortland .932 1997 200 350,250,180 TexasInstruments RFAB USA,Texas,Richardson 2009 300 180,130 BiCMOS TexasInstruments RFAB2 USA,Texas,Richardson 6 Planned2023 300 180,130 TexasInstruments DMOS6 USA,Texas,Dallas 300 130–65,45 TexasInstruments DMOS5 USA,Texas,Dallas 200 180 BiCMOS TexasInstruments DFAB USA,Texas,Dallas 1964 150/200 1000–500 TexasInstruments SFAB USA,Texas,Sherman 150 2000–1000 TexasInstruments DHC USA,Texas,Dallas 2019[6] Foundry TexasInstruments DBUMP USA,Texas,Dallas 2018[7] Foundry TexasInstruments MIHO8 Japan,Ibaraki,Miho 200 350–250 BiCMOS TexasInstruments(formerlySpansion) Aizu Japan,Fukushima,Aizu 200 110 TexasInstruments(formerlySMIC-Cension) Chengdu(CFAB) China,Sichuan,Chengdu 200 TsinghuaUnigroup[8] China,Nanjing 10(firstphase),30 Planned 300 100,000(firstphase) 3DNANDFlash TsinghuaUnigroup-XMC(formerlyXinxin)[9] Fab1 China,Wuhan[1] 1.9 2008 300 90,65,60,50,45,40,32 30,000[10] Foundry,NOR TsinghuaUnigroup-YangtzeMemoryTechnologies(YMTC)-XMC(formerlyXinxin)[9][10][8] Fab2 China,Wuhan 24 2018[1] 300 20 200,000 3DNAND SMIC S1MegaFab(S1A/S1B/S1C)[11] China,Shanghai 200 350–90 114,000[12] Foundry SMIC S2(Fab8)[11] China,Shanghai 300 45/40–32/28 20,000[12] Foundry SMIC-SMSC SN1[11] China,Shanghai 10(expected) (planned) 300 12/14 70,000[9] Foundry SMIC B1MegaFab(Fab4,Fab6)[11] China,Beijing 2004 300 180–90/55 50,000[12] Foundry SMIC B2A[11] China,Beijing 3.59[13] 2014 300 45/40–32/28 35,000[12] Foundry SMIC Fab7[11] China,Tianjin 2004 200 350–90 50,000[12] Foundry SMIC Fab15[11] China,Shenzhen 2014 200 350–90 50,000[12] Foundry SMIC SZ(Fab16A/B)[11] China,Shenzhen 2019 300 8/14 40,000[9] Foundry SMIC[9] B3 China,Beijing 7.6 Underconstruction 300 35,000 Foundry WuxiXichanweixin(formerlySMIC-LFoundry [de])(formerlyLFoundry [de])(formerlyMicron)[14](formerlyTexasInstruments) LF Italy,Abruzzo,Avezzano 1995 200 180–90 50,000 Nanya Fab Taiwan 199x 300 DRAM Nanya Fab2 Taiwan,Linkou 0.8 2000 200[15] 175 30,000 DRAM Nanya Fab3A[16] Taiwan,NewTaipeiCity[17] 1.85[18] 2018 300 20 DRAM MESA+Institute NANOLAB Netherlands,Enschede Academicresearch,R&Dactivities,pilotproductionforMEMS,Photonics,Microfluidics Micron Fab1 USA,Virginia,Manassas 1981 300 DRAM (futureTexasInstruments)Micron(formerlyIMFlash) Fab2IMFT USA,Utah,Lehi 300 25[19] 70,000 DRAM,3DXPoint Micron Fab4[20] USA,Idaho,Boise 300 RnD Micron(formerlyDominionSemiconductor) Fab6 USA,Virginia,Manassas 1997 300 25[19] 70,000 DRAM,NANDFLASH,NOR Micron(formerlyTECHSemiconductor) Fab7(formerlyTECHSemiconductor,Singapore)[21] Singapore 300 60,000 NANDFLASH Micron(formerlyIMFlash)[22] Fab10[23] Singapore 3 2011 300 25 100,000 NANDFLASH Micron(formerlyInotera) Fab11[24] Taiwan,Taoyuan 300 20andunder 80,000 DRAM Micron Fab13[25] Singapore 200 NOR Micron Singapore[26] 200 NORFlash Micron MicronSemiconductorAsia Singapore[26] Micron China,Xi'an[26] Micron(formerlyElpidaMemory) Fab15(formerlyElpidaMemory,Hiroshima)[20][26] Japan,Hiroshima 300 20andunder 100,000 DRAM Micron(formerlyRexchip) Fab16(formerlyRexchip,Taichung)[20] Taiwan,Taichung 300 30andunder 80,000 DRAM,FEOL Micron(formerlyCando) MicronMemoryTaiwan[26] Taiwan,Taichung ?,2018 300 DRAM,BEOL Micron A3 Taiwan,Taichung[27] Underconstruction 300 DRAM Intel D1B USA,Oregon,Hillsboro 1996 300 10/14/22 Microprocessors[28] Intel D1C[29][28] USA,Oregon,Hillsboro 2001 300 10/14/22 Microprocessors[28] Intel D1D[29][28] USA,Oregon,Hillsboro 2003 300 7/10/14 Microprocessors[28] Intel D1X[30][28] USA,Oregon,Hillsboro 2013 300 7/10/14 Microprocessors[28] Intel Fab12[29][28] USA,Arizona,Chandler 1996 300 14/22/65 Microprocessors&chipsets[28] Intel Fab32[29][31] USA,Arizona,Chandler 3 2007 300 45 Intel Fab32[29][28] USA,Arizona,Chandler 2007 300 22/32 Microprocessors[28] Intel Fab42[32][33][28] USA,Arizona,Chandler 10[34] 2020[35] 300 7/10 Microprocessors[28] Intel Fab52,62[36][37] USA,Arizona,Chandler 20[36] 2024[36] Microprocessors[36] Intel Fab11x[29][28] USA,NewMexico,RioRancho 2002 300 32/45 Microprocessors[28] Intel(formerlyMicron)(formerlyNumonyx)(formerlyIntel) Fab18[38] Israel,SouthernDistrict,KiryatGat 1996 200,300 45/65/90/180 Microprocessorsandchipsets,[39]NORflash Intel Fab10[29] Ireland,CountyKildare,Leixlip 1994 200 Intel Fab14[29] Ireland,CountyKildare,Leixlip 1998 200 Intel Fab24[29][28] Ireland,CountyKildare,Leixlip 2004 300 14/65/90[40] Microprocessors,ChipsetsandComms[28] Intel Fab28[29][28] Israel,SouthernDistrict,KiryatGat 2008 300 10/22/45 Microprocessors[28] Intel Fab68[29][41] China,Dalian 2.5 2010 300 65[42] 30,000–52,000 Microprocessors(former),VNAND[28] Intel CostaRica,Heredia,Belén 1997 300 14/22 Packaging TowerSemiconductor(formerlyMaxim)(formerlyPhilips)(formerlyVLSI) Fab9[43][44] USA,Texas,SanAntonio 2003 200 180 Foundry,AlBEOL,Power,RFAnalog TowerSemiconductor(formerlyNationalSemiconductor) Fab1[45] Israel,NorthernDistrict,MigdalHaEmek 0.235[1] 1989,1986[1] 150 1000–350 14,000 Foundry,PlanarizedBEOL,WandOxideCMP,CMOS,CIS,Power,PowerDiscrete TowerSemiconductor Fab2[45] Israel,NorthernDistrict,MigdalHaEmek 1.226[1] 2003 200 180–130 51,000[1] Foundry,CuandAlBEOL,EPI,193 nmScanner,CMOS,CIS,Power,PowerDiscrete,MEMS,RFCMOS TowerSemiconductor(formerlyJazzTechnologies)(formerlyConexant)(formerlyRockwell) Fab3,[45]NewportBeach[1] USA,California,NewportBeach 0.165[1] 1967,1995[1] 200 130–500 25,000[1] Foundry,AlBEOL,SiGe,EPI TowerSemiconductor–TPSCo(formerlyPanasonic) Fab5,[45]Tonami[46] Japan,Tonami 1994 200 500–130 Foundry,Analog/Mixed-Signal,Power,Discrete,NVM,CCD TowerSemiconductor–TPSCo(formerlyPanasonic) Fab7,[45]Uozu[46] Japan,Uozu 1984 300 65.45 Foundry,CMOS,CIS,RFSOI,Analog/Mixed-Signal TowerSemiconductor–TPSCo(formerlyPanasonic) Fab6,[45]Arai[46] Japan,Arai 1976 200 130–110 Foundry,Analog/Mixed-Signal,CIS,NVM,ThickCuRDL Nuvoton[47] Fab2 Taiwan 150 350–1000 nm 45,000[47] GenericLogic,MixedSignal(MixedMode),HighVoltage,UltraHighVoltage,PowerManagement,MaskROM(FlatCell),EmbeddedLogic,Non-VolatileMemory,IGBT,MOSFET,Biochip,TVS,Sensor Nuvoton NuvotonTechnologyCorporation Taiwan,HsinchuSciencePark ISRO SCL[48] India,Mohali 2006 200 180 MEMS,CMOS,CCD,N.S. STAR-C[49][50] MEMS[50] India,Bangalore 1996 150 1000–500 MEMS STAR-C[49][50] CMOS[50] India,Bangalore 1996 150 1000–500 CMOS GAETEC[49][51] GaAs[51] India,Hyderabad 1996 150 700–500 MESFET GeneralMotorsComponentsHoldings FabIII USA,Indiana,Kokomo 125/200 500+ RaytheonSystemsLtd UK,Scotland,Glenrothes 1960 100 CMOS-on-SiC,foundry BAESystems(formerlySanders) USA,NewHampshire,Nashua[1] 1985[1] 100,150 140,100,70,50 MMIC,GaAs,GaN-on-SiC,foundry FlirSystems USA,California,SantaBarbara[52] 150 IRDetectors,ThermalImagingSensors TeledyneDALSA TeledyneDALSASemiconductor Canada,Quebec,Bromont 1980 150/200 HVASICs,HVCMOS,MEMS,CCD Teledynee2v Teledynee2v UK,England,Essex,Chelmsford 1980 150/200 CCDFab,CMOSPackaging,III-V,MCT,6inchand8inchbackthinning Qorvo(formerlyRFMicroDevices) USA,NorthCarolina,Greensboro[53] 100,150 500 8,000 SAWfilters,GaAsHBT,GaAspHEMT,GaN Qorvo(formerlyTriQuintSemiconductor)(formerlyMicron)(formerlyTexasInstruments)(formerlyTwinStarSemiconductor) USA,Texas,Richardson[53] 0.5 1996 100,150,200 350,250,150,90 8,000 DRAM(former),BAWfilters,poweramps,GaAspHEMT,GaN-on-SiC Qorvo(formerlyTriQuintSemiconductor) USA,Oregon,Hillsboro[53] 100,150 500 Poweramps,GaAs Apple(formerlyMaxim)(formerlySamsung) X3[54] USA,California,SanJose ?,1997,2015[55] 600–90 AnalogDevices Limerick Ireland,CountyLimerick,Limerick 200 AnalogDevices Wilmington USA,Massachusetts,Wilmington 200/150 AnalogDevices(formerlyLinearTechnology) Hillview USA,California,Milpitas 150 AnalogDevices(formerlyLinearTechnology) Camas USA,Washington,Camas 150 AnalogDevices(formerlyMaximIntegrated) MaxFabNorth[56] USA,Oregon,Beaverton Microchip(formerlyCaliforniaMicroDevices)(formerlyGTE) Fab2 USA,Arizona,Tempe 130,150,200 5000–350 Microchip(formerlyFujitsu) Fab4 USA,Oregon,Gresham 2004 200 500–130 Microchip(formerlyAtmel) Fab5 USA,Colorado,ColoradoSprings 150 1000–250 Rohm[57](formerlyRenesas) ShigaFactory Japan 200 150 IGBT,MOSFET,MEMS Rohm(LapisSemiconductor)(formerlyOkiSemiconductor)(OkiElectricIndustry)[57][58] Miyasaki Japan 150 MEMS Rohm(LapisSemiconductor)[57] BuildingNo.1 Japan 1961[59] Transistors Rohm(LapisSemiconductor)[57] BuildingNo.2 Japan 1962[59] Transistors Rohm(LapisSemiconductor)[57] BuildingNo.3 Japan 1962[59] Transistors Rohm(LapisSemiconductor)[57] BuildingNo.4 Japan 1969[59] Transistors Rohm(LapisSemiconductor)[57] ChichibuPlant Japan 1975[59] DRAM Rohm(LapisSemiconductor)[57] VLSILaboratoryNo.1 Japan 1977[59] VLSI Rohm(LapisSemiconductor)[57] VLSILaboratoryNo.2 Japan 1983[59] Rohm(LapisSemiconductor)[57] VLSILaboratoryNo.3 Japan 1983[59] DRAM Rohm(LapisSemiconductor)[57] OregonPlant USA,Oregon 1990[59] Rohm(LapisSemiconductor)[57] Thailand 1992[59] Rohm(LapisSemiconductor)[57] ULSILaboratoryNo.1 Japan 1992[59] 500 DRAM Rohm(Kionix)[60] Ithaca USA,NewYork,Ithaca 150 MEMS Rohm(Kionix)[60](formerlyRenesasKyoto) Kyoto Japan,Kyoto 200 MEMS OkiElectricIndustry[61] Japan,Tokyo,Minato-ku 1961 100,150,130,76 7,200 Bipolar,MaskROM OkiElectricIndustry[61] MiyazakiOkiElectricCo 1981 100,150,130,76 3000 7,200 Bipolar,MaskROM,DRAM[59] OkiElectricIndustry[61] MiyagiFacility 1988[59] 100,150,130,76 7,200 Bipolar,MaskROM OkiElectricIndustry[61] HachiojiFacility 100,150,130,76 7,200 Bipolar,MaskROM OkiElectricIndustry[62] 150 180–150 SoCs,LSI,Logic,Memory FujiElectric[63] Omachi Japan,NaganoPrefecture FujiElectric[64] Iyama Japan,NaganoPrefecture FujiElectric[65] Hokuriku Japan,Toyamaprefecture FujiElectric[66] Matsumoto Japan,Naganoprefecture Fujitsu Kawasaki Japan,Kawasaki 1966[67] Fujitsu[68][69] FabB1(atMie)[70] Japan,1500TadochoMizono,Kuwana,Mie[71] 2005 300 65,90 15,000 Foundry,Ultra-lowPowerICs,EmbeddedMemory,RFICs Fujitsu[68][69] FabB2(atMie)[70] Japan,1500TadochoMizono,Kuwana,Mie[71] 1(total)[72] 2007,July 300 65,90 25,000 Foundry,Ultra-lowPowerICs,EmbeddedMemory,RFICs[73] Fujitsu[68][69] Japan,1500TadochoMizono,Kuwana,Mie[71] 2015 300 40[74] 5,000 Foundry Fujitsu KumagayaPlant[70] Japan,Saitama,1224Oaza-Nakanara,Kumagaya-shi,360-0801 1974 Fujitsu[75] SuzakaPlant Japan,Nagano,460Oaza-Koyama,Suzaka-shi,382-8501 Fujitsu IwatePlant[76][4] Japan,Iwate,4-2Nishinemoriyama,Kanegasaki-cho,Isawa-gun,029-4593 Denso(formerlyFujitsu)[77] DensoIwate[78][79][80] Japan,IwatePrefecture,Kanegasaki-cho 0.088 Underconstruction,2019,May(planned) Semiconductorwafersandsensors(sinceJune2017) CanonInc. Oita[81] Japan CanonInc. Kanagawa[82] Japan CanonInc. Ayase[81] Japan SharpCorporation Fukuyama[83] Japan JapanSemiconductor [84] Iwate Japan JapanSemiconductor[84] Oita Japan Kioxia YokkaichiOperations[85][86] Japan,Yokkaichi 1992 173,334[87][88][89][90] FlashMemory Kioxia/SanDisk Y5Phase1(atYokkaichiOperations) Japan,800Yamanoisshikicho,Yokkaichi,Mie[91] 2011 Flash Kioxia/SanDisk Y5Phase2[91](atYokkaichiOperations) Japan,Mie 2011 300 15[92] Flash Kioxia[93] Y3(atYokkaichiOperations) Japan,Yokkaichi 300 NANDMemory Kioxia[94] Y4(atYokkaichiOperations) Japan,Yokkaichi 2007 300 NANDMemory Kioxia[95] KagaToshiba Japan,Ishikawa Powersemiconductordevices Kioxia[96] OitaOperations Japan,Kyushu Kioxia[97][98] Y6(phase1)(atYokkaichiOperations)[99] Japan,Yokkaichi 1.6,1.7,1.8(estimates)(combinedcostsofinstallationofequipmentatPhase1andconstructionofPhase2)[100][86] 2018 300 BiCSFLASH™ Kioxia[97][98] Y6(phase2)(atYokkaichiOperations) Japan,Yokkaichi 1.6,1.7,1.8(estimates)(combinedcostsofinstallationofequipmentatPhase1andconstructionofPhase2)[100][86] Planned 300 BiCSFLASH™ Kioxia[97][98] Y7 Japan,Yokkaichi 4.6[101][102] Planned 300 BiCSFLASH™ Kioxia[97] Y2(atYokkaichiOperations) Japan,Yokkaichi 1995 3DNAND Kioxia[103][104] NewY2(atYokkaichiOperations) Japan,Yokkaichi 2016,July15 300 3DNAND Kioxia[105][106][107][108] K1 Japan,IwatePrefecture UnderConstruction 300 3DNAND WesternDigital[109][110] Hitachi[111] RinkaiFactory Japan,5-2-2,Omikacho,Hitachi-shi,Ibaraki,319-1221 MEMSFoundry Hitachi[111] HaramachiFactory Japan,20AzaOohara,Shimo-Ota,Haramachi-ku,Minamisouma-shi,Fukushima,975-0041 Powersemiconductors Hitachi[111] YamanashiFactory Japan,545,Itchohata,Chuo-shi,Yamanashi,409-3813 Powersemiconductors ABB[112] Lenzburg Switzerland,Aargau,Lenzburg 0.140 2010(secondphase) 130,150 18,750(225,000peryear) Highpowersemiconductors,diodes,IGBT,BiMOS ABB[112](formerlyPolovodičea.s.)[113] CzechRepublic,Prague Highpowersemiconductors,diodes[114] EMMicroelectronic EMMarin Switzerland,LaTène,Neuchâtel MitsubishiElectric[115] PowerDeviceWorks,KunamotoSite Japan Powersemiconductors MitsubishiElectric[115] PowerDeviceWorks,FukuokaSite Japan,KunamotoPrefecture,FukuokaCity[116] Powersemiconductorsandsensors[116] MitsubishiElectric[117] Highfrequencyopticaldevicemanufacturingplant Japan,HyogoPrefecture[117] Highfrequencysemiconductordevices(GaAsFET,GaN,MMIC)[117] PowerchipSemiconductor MemoryFoundry,FabP1[118][119] Taiwan,Hsinchu 2.24[1] 2002[1] 300 90,70,22[120] 80,000 Foundry,MemoryIC,LCDdriveIC,IntegratedMemoryChips,CMOSImageSensors,andPowerManagementIC PowerchipSemiconductor FabP2[119] Taiwan,Hsinchu,HsinchuSciencePark 1.86[1] 2005[1] 300 90,70,22[120] 80,000 Foundry,MemoryIC,LCDdriveIC,IntegratedMemoryChips,CMOSImageSensors,andPowerManagementIC PowerchipSemiconductor(formerlyMacronix) FabP3[119] Taiwan,Hsinchu,HsinchuSciencePark 300 90,70,22[120] 20,000 Foundry,MemoryIC,LCDdriveIC,IntegratedMemoryChips,CMOSImageSensors,andPowerManagementIC SPIL(formerlyProMOS) ProMOSFab4[121][122] Taiwan,Taichung 1.6 300 70 Macronix(formerlyProMOS)[123] Fab5 300 50,000 Macronix[123] Fab2 200 48,000 (futureFoxconn)Macronix[123] Fab1 150 40,000 Renesas[124] NakaFactory Japan 2009 300 28[125] Renesas(formerlyTrecenti) Japan[126][127] 300 180,90,65 Foundry Renesas[124] TakasakiFactory Japan,111,Nishiyokotemachi,Takasaki-shi,Gunma,370-0021 Renesas[124] ShigaFactory Japan,2-9-1,Seiran,Otsu-shi,Shiga,520-8555 Renesas[124] YamaguchiFactory Japan,20192–3,HigashimaguraJinga,Ube-shi,Yamaguchi,757-0298 Renesas[124] KawashiriFactory Japan,1-1-1,Yahata,Minami-ku,Kumamoto-shi,Kumamoto,861-4195 Renesas[124] SaijoFactory Japan,8–6,Hiuchi,Saijo-shi,Ehime,793-8501 Renesas[124] MusashiSite Japan,5-20-1,Josuihon-cho,Kodaira-shi,Tokyo,187-8588 Renesas(formerlyNECElectronics)(formerlyNEC) Roseville[128][129] USA,California,Roseville 1.2[130] 2002,April 200 RAM,SoCs,MultimediaChips Renesas-Intersil[124] 1MurphyRanchRd USA,California,Milpitas IntegratedDeviceTechnology USA,Oregon,Hillsboro 1997 200 140–100[131] NEC[61] 100,130,150 SRAM,DRAM NEC[132] Japan DRAM TSISemiconductors[133](formerlyRenesas) Rosevillefab,M-Line,TD-Line,K-Line[134][1] USA,California,Roseville 1992,1985[1] 200 TDK-Micronas FREIBURG[135][136] Germany,19D-79108,Hans-Bunte-Strasse TDK(formerlyRenesas) TsuruokaHigashi[137][138] 125[139] TDK Japan,Saku[140] TDK-Tronics USA,Texas,Addison[141] Silanna(formerlySapphiconSemiconductor) Australia,NewSouthWales,Sydney[1] 0.030 1965,1989[1] 150 Silanna(formerlySapphiconSemiconductor)(formerlyPeregrineSemiconductor)(formerlyIntegratedDeviceTechnology) Australia,NewSouthWales,Sydney [142] 150 500,250 RFCMOS,SOS,foundry MurataManufacturing[143] Nagano[139] Japan 0.100 SAWfilters[139] MurataManufacturing[143] Otsuki[139] Japan MurataManufacturing[143] Kanazawa Japan 0.111 SAWfilters[139] MurataManufacturing(formerlyFujifilm)[144][145] Sendai Japan,MiyagiPrefecture 0.092[139] MEMS[146] MurataManufacturing[144] Yamanashi Japan,YamanashiPrefecture MurataManufacturing[147] Yasu Japan,ShigaPrefecture,Yasu MurataElectronics(Finland)[148](formerlyVTI,since1979Vaisalasint.semicon.line)[149] Vantaa Finland 2012,[150]expanded2019[151] 3DMEMSaccelerometers,inclinometers,pressuresensors,gyros,oscillatorsetc.[152] MitsumiElectric[153] SemiconductorWorks#3 Japan,AtsugiOperationBase 2000 MitsumiElectric[153] Japan,AtsugiOperationBase 1979 Sony[154] KagoshimaTechnologyCenter Japan,Kagoshima 1973 BipolarCCD,MOS,MMIC,SXRD Sony[154] OitaTechnologyCenter Japan,Oita 2016 CMOSImageSensor Sony[154] NagasakiTechnologyCenter Japan,Nagasaki 1987 MOSLSI,CMOSImageSensors,SXRD Sony[154] KumamotoTechnologyCenter Japan,Kumamoto 2001 CCDImageSensors,H-LCD,SXRD Sony[154] ShiroishiZaoTechnologyCenter Japan,Shiroishi 1969 SemiconductorLasers Sony SonyShiroishiSemiconductorInc. Japan,Miyagi SemiconductorLasers[155] Sony(formerlyRenesas)(formerlyNECElectronics)(formerlyNEC)[154][156][157] YamagataTechnologyCenter Japan,Yamagata 2014 CMOSImageSensor,eDRAM(formerly) MagnaChip F-5[158] 2005 200 130 SKHynix[159] China,Chongqing SKHynix[159] China,Chongqing SKHynix[160][161] SouthKorea,Cheongju,Chungcheongbuk-do Underconstruction[162] NANDFlash SKHynix[161] SouthKorea,Cheongju Underconstruction NANDFlash SKHynix M8 SouthKorea,Cheongju 200 Foundry SKHynix M10 SouthKorea,Icheon 300 DRAM SKHynix M11 SouthKorea,Cheongju 300 NANDFlash SKHynix M12 SouthKorea,Cheongju 300 NANDFlash SKHynix HC1 China,Wuxi 300 100,000[9] DRAM SKHynix HC2 China,Wuxi 300 70,000[9] DRAM SKHynix M14 SouthKorea,Icheon 300 DRAM,NANDFlash SKHynix[161] M16 SouthKorea,Incheon 3.13(13.4totalplanned) 2021(planned) 300 10(EUV) 15,000-20,000(initial) DRAM LGInnotek[163] Paju SouthKorea,570,Hyuam-ro,Munsan-eup,Paju-si,Gyeonggi-do,10842 LEDEpi-wafer,Chip,Package DiodesIncorporated[164](formerlyZetexSemiconductors) OFAB UK,England,GreaterManchester,Oldham 150 DiodesIncorporated(formerlyBCDSemi)[165] China 150 4000–1000 DiodesIncorporated(formerlyTexasInstruments) GFAB UK,Scotland,Greenock 150/200 40,000 DiodesIncorporated[166](formerlyONSemiconductor)(formerlyFairchildSemiconductor)(formerlyNationalSemiconductor)(formerlyFairchildSemiconductor) SPFAB USA,Maine,SouthPortland 1960–1997 200 350 Lite-OnOptoelectronics[167] China,Tianjin Lite-OnOptoelectronics[167] Thailand,Bangkok Lite-OnOptoelectronics[167] China,Jiangsu Lite-OnSemiconductor[168] KeelungPlant Taiwan,Keelung 1990 100 Thyristor,DIscrete Lite-OnSemiconductor[168] HsinchuPlant Taiwan,Hsinchu 2005 BipolarBCD,CMOS Lite-OnSemiconductor[168] Lite-OnSemi(Wuxi) China,Jiangsu 2004 100 Discrete Lite-OnSemiconductor[168] WuxiWMECPlant China,Jiangsu 2005 Discrete,Power,OpticalICs Lite-OnSemiconductor[168] Shanghai(SSEC)Plant China,Shanghai 1993 76 Fab,Assembly Trumpf[169](formerlyPhilipsPhotonics) Germany,Baden-Württemberg,Ulm VCSEL Philips[170] Netherlands,NorthBrabant,Eindhoven 200,150 30,000 R&D,MEMS NewportWaferFab[171](formerlyInfineonTechnologies) FAB11 UK,Wales,Newport 200[172] 180–700[172] 32,000[172] Foundry,CompoundSemiconductors,IC,MOSFET,IGBT[173] Nexperia(formerlyNXPSemiconductors)(formerlyPhilips) Hamburgsite[174] Germany,Hamburg 1953 200 35,000 Small-signalandbipolardiscretedevices Nexperia(formerlyNXPSemiconductors)(formerlyPhilips)(formerlyMullard) Manchester[174] UK,England,GreaterManchester,Stockport 1987? 150,200 24,000 GaNFETs,TrenchMOSMOSFETs NXPSemiconductors(formerlyPhilips) ICN8 Netherlands,Gelderland,Nijmegen 200 40,000+[175] SiGe NXPSemiconductors Japan[61] Bipolar,Mos,Analog,Digital,Transistors,Diodes NXPSemiconductors-SSMC SSMC Singapore 1.7[1] 2001[1] 200 120 53,000 SiGe NXPSemiconductors-JilinSemiconductor China,Jilin 130 NXPSemiconductors(formerlyFreescaleSemiconductor)(formerlyMotorola) OakHillFab[176] USA,Texas,Austin .8[177] 1991 200 250 NXPSemiconductors(formerlyFreescaleSemiconductor)(formerlyMotorola) ChandlerFab[178] USA,Arizona,Chandler[179] 1.1[180]+0.1(GaN) 1993 150(GaN),200 180 GaN-on-SiCpHEMT NXPSemiconductors(formerlyFreescaleSemiconductor)(formerlyMotorola) ATMC[181] USA,Texas,Austin 1995 200 90 NXPSemiconductors(formerlyFreescaleSemiconductor)(formerlyMotorola) MOTOFAB1[182] Mexico,Jalisco,Guadalajara 2002 AWSC Taiwan,Tainan[1] 1999[1] 150 12,000 Foundry,GaAsHBT,DpHEMT,IPD,EDpHEMT,EDBiHEMT,InGaP SkyworksSolutions[183](formerlyConexant)(formerlyRockwell) USA,California,NewburyPark 100,150 CompoundSemiconductors(GaAs,AlGaAs,InGaP) SkyworksSolutions[183](formerlyAlphaIndustries) USA,Massachusetts,Woburn 100,150 RF/cellularcomponents(SiGe,GaAs) SkyworksSolutions[183] Japan,Osaka SAW,TC-SAWFilters SkyworksSolutions[183] Japan,Kadoma SAW,TC-SAWFilters SkyworksSolutions[183] Singapore,BedokSouthRoad SAW,TC-SAWFilters WinSemiconductor FabA[184] Taiwan,TaoyuanCity 150[185] 2000–10 Foundry,GaAs WinSemiconductor FabB[184] Taiwan,TaoyuanCity 150[185] 2000–10 Foundry,GaAs,GaN WinSemiconductor FabC Taiwan,Taoyuan[1] 0.050,0.178 2000,2009[1] 150 Foundry,GaAs ONSemiconductor(formerlyMotorola) ISMF Malaysia,Seremban 150 350 80,000 Discrete ONSemiconductor(formerlyTruesenseImaging,Kodak) Rochester USA,NewYork,Rochester[186] CCDsandImageSensors ONSemiconductor(formerlyLSI) Gresham[187] USA,Oregon,Gresham 200 110 ONSemiconductor(formerlyTESLA) Roznov CzechRepublic,Zlín,RožnovpodRadhoštěm 150 5000 ONSemiconductor(formerlyAMISemiconductor) Pocatello[188] USA,Idaho,Pocatello 1997[189] 200 350 ONSemiconductor(formerlyAMISemiconductor)(formerlyAlcatelMicroelectronics)(formerlyMietec) Oudenaarde Belgium,EastFlanders,Oudenaarde 150 350 4,000 ONSemiconductor(formerlySanyo)[190][191] Niigata Japan,Niigata 130,150 350 ONSemiconductor(formerlyFairchildSemiconductor)(formerlyNationalSemiconductor)(formerlyFairchildSemiconductor) USA,Pennsylvania,MountainTop 1960–1997 200 350 ONSemiconductor(formerlyFujitsu)[192][193] AizuWakamatsuPlant[194] Japan,Fukushima,3KogyoDanchi,Monden-machi,Aizuwakamatsu-shi,965-8502 1970[67] 150,200[195][196][197][198] Memory,Logic ams[199] FABB Austria,Styria,Unterpremstätten 200 350 Osram(OsramOptoSemiconductors) Malaysia,Kulim,KulimHi-TechPark 0.350,1.18[200] 2017,2020(secondphase,planned)[201][202] 150 LEDs Osram(OsramOptoSemiconductors) Malaysia,Penang[203][204] 2009 100 LEDs Osram(OsramOptoSemiconductors) Germany,Bavaria,Regensburg[205] 2003,2005(secondphase)[206] LEDs Winbond MemoryProductFoundry[207] Taiwan,Taichung 300 46 Winbond CTSPSite[208][209] Taiwan,No.8,Keya1stRd.,DayaDist.,CentralTaiwanSciencePark,TaichungCity42881 300 Winbond[210] Planned 300 VanguardInternationalSemiconductor Fab1 Taiwan,Hsinchu 0.997[1] 1994[1] 200 55,000 Foundry VanguardInternationalSemiconductor(formerlyWinbond) Fab2(formerlyFab4&5)[211] Taiwan,Hsinchu 0.965[1] 1998[1] 200 55,000 Foundry VanguardInternationalSemiconductorCorporation(formerlyGlobalFoundries)(formerlyChartered) Fab3E[212] Singapore 1.3[1] 200 180 34,000 Foundry TSMC Fab2[213] Taiwan,Hsinchu 0.735[1] 1990[1] 150 88,000[214][1] Foundry TSMC Fab3 Taiwan,Hsinchu 2[1] 1995[1] 200 100,000[1] Foundry TSMC Fab5 Taiwan,Hsinchu 1.4[1] 1997[1] 200 48,000[1] Foundry TSMC Fab6 Taiwan,Tainan 2.1[1] 2000,January;2001[126] 200,300 180–? 99,000[1] Foundry TSMC(formerlyTASMC)(formerlyAcerSemiconductorManufacturingInc.)(formerlyTexasInstruments)[215][216][217] Fab7[218] Taiwan 200 350,250,220,180 33,000 Foundry(current) DRAM(former),Logic(former) TSMC(formerlyWSMC) Fab8 Taiwan,Hsinchu 1.6[1] 1998[1] 200 250,180 85,000[1] Foundry TSMC(formerlyWSMC)[127] 2000 200 250,150 30,000 Foundry TSMCChinaCompany Fab10 China,Shanghai 1.3[1] 2004[1] 200 74,000 Foundry TSMCWaferTech Fab11 USA,Washington,Camas 1.2 1998 200 350,250,180,160 33,000 Foundry TSMC Fab12 Taiwan,Hsinchu 5.2,21.6(total,allphasescombined)[1] 2001[1] 300 150–28 77,500–123,800(allphasescombined)[1] Foundry TSMC Fab12A Taiwan,Hsinchu 300 25,000 Foundry TSMC Fab12B Taiwan,Hsinchu 300 25,000 Foundry TSMC Fab12(P4) Taiwan,Hsinchu 6[1] 2009[1] 300 20 40,000[1] Foundry TSMC Fab12(P5) Taiwan,Hsinchu 3.6[1] 2011[1] 300 20 6,800[1] Foundry TSMC Fab12(P6) Taiwan,Hsinchu 4.2[1] 2013[1] 300 16 25,000 Foundry TSMC Fab12(P7) Taiwan,Hsinchu 300 16 Foundry TSMC Fab14 Taiwan,Tainan 5.1[1] 2002,[126]2004[1] 300 20 82,500[1] Foundry TSMC Fab14(B) Taiwan,Tainan 300 16 50,000+[219] Foundry TSMC Fab14(P3)[1] Taiwan,Tainan 3.1[1] 2008[1] 300 16 55,000[1] Foundry TSMC Fab14(P4)[1] Taiwan,Tainan 3.750[1] 2011[1] 300 16 45,500[1] Foundry TSMC Fab14(P5)[1] Taiwan,Tainan 3.650[1] 2013[1] 300 16 Foundry TSMC Fab14(P6)[1] Taiwan,Tainan 4.2[1] 2014[1] 300 16 Foundry TSMC Fab14(P7)[1] Taiwan,Tainan 4.850[1] 2015[1] 300 16 Foundry TSMC Fab15[220] Taiwan,Taichung 9.3 2011 300 20 100,000+(166,000estimate)[221][219][222] Foundry TSMC Fab15(B) Taiwan,Taichung 300 Foundry TSMC Fab15(P1)[1] Taiwan,Taichung 3.125[1] 2011 300 4,000[1] Foundry TSMC Fab15(P2)[1] Taiwan,Taichung 3.150[1] 2012[1] 300 Foundry TSMC Fab15(P3)[1] Taiwan,Taichung 3.750[1] 2013[1] 300 Foundry TSMC Fab15(P4)[1] Taiwan,Taichung 3.800[1] 2014[1] 300 Foundry TSMC Fab15(P5)[1] Taiwan,Taichung 9.020[1] 2016[1] 300 35,000 Foundry TSMC Fab15(P6&P7) Taiwan,Taichung 2019 300 Foundry TSMCNanjingCompany Fab16 China,Nanjing 2018 300 20,000 Foundry TSMC Fab18(P1-P3) Taiwan,SouthernTaiwanSciencePark[223][224] 17.08 2020(P7underconstruction) 300 5[225] 120,000 Foundry TSMC Fab18(P4-P6) Taiwan,SouthernTaiwanSciencePark 2022(planned),underconstruction 300 3[9][226][227] 120,000 Foundry TSMC Fab20(P1-P4) Taiwan,Hsinchu 2024-2025(planned) 300 2 Foundry TSMC Fab21 USA,Arizona,Phoenix 12[228] Q12024(planned),P1underconstruction[228][229] 300 5&4[229] 20,000[229] Foundry Epistar FabF1[230] Taiwan,LongtanSciencePark LEDs Epistar FabA1[230] Taiwan,HsinchuSciencePark LEDs Epistar FabN2[230] Taiwan,HsinchuSciencePark LEDs Epistar FabN8[230] Taiwan,HsinchuSciencePark LEDs Epistar FabN1[230] Taiwan,HsinchuSciencePark LEDs Epistar FabN3[230] Taiwan,HsinchuSciencePark LEDs Epistar FabN6[230] Taiwan,ChunanSciencePark LEDs Epistar FabN9[230] Taiwan,ChunanSciencePark LEDs Epistar FabH1[230] Taiwan,CentralTaiwanSciencePark LEDs Epistar FabS1[230] Taiwan,TainanSciencePark LEDs Epistar FabS3[230] Taiwan,TainanSciencePark LEDs Epistar(formerlyTSMC)[231][232][233] Taiwan,Hsin-ChuSciencePark 0.080 2011,secondhalf LEDs Lextar T01 Taiwan,HsinchuSciencePark LEDs GCS USA,California,Torrance[1] 1999[1] 100 6,400 Foundry,GaAs,InGaAs,InGaP,InP,HBT,PICs Bosch Germany,Baden-Württemberg,Reutlingen 1995[234] 150 ASIC,analog,power,SiC Bosch Germany,Saxony,Dresden 1.0[235] 2021 300 65 Bosch WaferFab Germany,Baden-Württemberg,Reutlingen 0.708[236] 2010[234] 200 30,000 ASIC,analog,power,MEMS STMicroelectronics AMK8(second,newerfab) Singapore,AngMoKio 1995 200 STMicroelectronics(formerlySGSMicroelettronica) AMJ9(firstfab) Singapore,AngMoKio 1984[237] 150,200 6"14kpcs/day,8"1.4kpcs/day Power-MOS/IGBT/bipolar/CMOS STMicroelectronics Crolles1/Crolles200 France,Auvergne-Rhône-Alpes,Crolles 1993 200 25,000 STMicroelectronics Crolles2/Crolles300 France,Auvergne-Rhône-Alpes,Crolles 2003 300 90,65,45,32,28 20,000 FDSOI STMicroelectronics Tours France,Centre-ValdeLoire,Tours 200 500 8":9kpcs/W;12"400–1000/W ASIC STMicroelectronics(formerlySGS-ATES) R2(upgradedin2001fromR1) Italy,Lombardy,AgrateBrianza 1963 200 STMicroelectronics(formerlySGS-ATES) AG8/AGM Italy,Lombardy,AgrateBrianza 1963 200 STMicroelectronics Catania Italy,Sicily,Catania 1997 150(GaN),200 GaN STMicroelectronics Rousset France,Provence-Alpes-Côted'Azur,Rousset 2000 200 X-Fab Erfurt Germany,Thuringia,Erfurt 1985[1] 200[238] 600–1000[238] 11200–[238] Foundry X-Fab(formerlyZMD) Dresden Germany,Saxony,Dresden 0.095[1] 1985[1] 200[239] 350–1000[239] 6000–[239] Foundry,CMOS,GaN-on-Si X-Fab(formerlyItzehoe) Itzehoe Germany,Schleswig-Holstein,Itzehoe 200[240] 13000–[240] Foundry,MEMS X-Fab(formerly1stSilicon)[241][242] Kuching Malaysia,Kuching 1.89[1] 2000[1] 200[243] 130–350[243] 30,000–[243] Foundry X-Fab(formerlyTexasInstruments) Lubbock USA,Texas,Lubbock 0.197[1] 1977[1] 150,200[244] 600–1000[244] 15000–[244] Foundry,SiC X-FabFranceSAS(formerlyAltisSemiconductor)(formerlyIBM)[245] ACL-AMF France,Île-de-France,Corbeil-Essonnes 1991,1964[1] 200 130–350 Foundry,CMOS,RFSOI CEITEC Brazil,RioGrandedoSul,PortoAlegre 2010 200 600–1000 RFID IXYS Germany,Hesse,Lampertheim[246] IGBT[246] IXYS UK,England,Wiltshire,Chippenham[246] IXYS USA,Massachusetts[246] IXYS USA,California[246] Samsung V1-Line[247] SouthKorea,Hwaseong 6 2020,February20 300 7 Microprocessors,Foundry Samsung S3-Line[248] SouthKorea,Hwaseong 10.2,16.2(planned)[249][250] 2017[249] 300 10 200,000 DRAM,VNAND,Foundry Samsung S2-Line[251] USA,Texas,Austin 16[252][253] 2011 300 65–11 92,000 Microprocessors,FDSOI,Foundry,NAND[254] Samsung S1-Line[255] SouthKorea,Giheung 33(total) 2005(secondphase),1983(firstphase)[256][257] 300 65–7 62,000 Microprocessors,S.LSI,LEDs,FDSOI,Foundry[258] Samsung Pyeongtaek[259][260][249] SouthKorea,Pyeongtaek 14.7,27(total)[261][253][262][263][264][265][266][162] 2017,July6 300 14 450,000[267] V-NAND,DRAM,Foundry Samsung 6Line[268] SouthKorea,Giheung 200 180–65 Foundry Samsung SamsungChinaSemiconductor[269] China,ShaanxiProvince DDRMemory Samsung SamsungSuzhouResearchCenter(SSCR)[255] China,Suzhou,SuzhouIndustrialPark DDRMemory Samsung OnyangComplex[269] SouthKorea,Chungcheongnam-do display.backendprocess.test Samsung F1x1[270][249] China,Xian 2.3[271] 2014(firstphase,secondphaseisunderreview)[249] 300 20 100,000 VNAND Samsung GiheungCampus[272] SouthKorea,Gyeonggi-do,Yongin LEDs Samsung HwasungCampus[272] SouthKorea,Gyeonggi-do,Hwaseong LEDs Samsung TianjinSamsungLEDCo.,Ltd.[272] China,Tianjin,Xiqing LEDs Seagate USA,Minnesota,Minneapolis[273] Seagate UK,NorthernIreland[274][275][276][277] BroadcomLimited(PreviouslyAvago) USA,Colorado,FortCollins[278] CreeInc.[279] Durham USA,NorthCarolina,Durham CompoundSemiconductors,LEDs CreeInc.[280] ResearchTrianglePark USA,NorthCarolina GaNHEMTRFICs SMARTModularTechnologies Brazil,SãoPaulo,Atibaia 2006 Packaging ChangxinMemoryTechnologies China 7.2 2019 300 19,17 125,000 DRAM[281] InfineonTechnologies Villach Austria,Carinthia,Villach 1970[282] 100/150/200/300 MEMS,SiC,GaN InfineonTechnologies Dresden Germany,Saxony,Dresden 3[283] 1994–2011[284] 200/300 90 InfineonTechnologies Kulim[285] Malaysia,Kulim 2006[286] 200/300 50,000 InfineonTechnologies Kulim2 Malaysia,Kulim 2015 200/300 50,000 InfineonTechnologies Regensburg[287] Germany,Bavaria,Regensburg 1959 InfineonTechnologies Cegled[288] Hungary,Pest,Cegléd InfineonTechnologies Cheonan SouthKorea,Cheonan-si InfineonTechnologies ElSegundo USA,California,ElSegundo[289] InfineonTechnologies Batam Indonesia,RiauIslands,Batam InfineonTechnologies Leominster USA,Massachusetts,Leominster InfineonTechnologies Malacca Malaysia,Malacca InfineonTechnologies Mesa USA,Arizona,Mesa InfineonTechnologies MorganHill USA,California,MorganHill InfineonTechnologies Morrisville USA,NorthCarolina,Morrisville InfineonTechnologies Neubiberg Germany,Bavaria,Neubiberg InfineonTechnologies SanJose USA,California,SanJose InfineonTechnologies Singapore InfineonTechnologies Temecula USA,California,Temecula InfineonTechnologies Tijuana Mexico,BajaCalifornia,Tijuana InfineonTechnologies Warstein Germany,NorthRhine-Westphalia,Warstein InfineonTechnologies Wuxi China,Wuxi InfineonTechnologies-CypressSemiconductor Fab25 USA,Texas,Austin 1994 200 Flash/Logic SkyWaterTechnology(formerlyCypressSemiconductor)(formerlyControlData)(formerlyVTC) Minnesotafab USA,Minnesota,Bloomington 1991 200 65,90,130,180,250,350 Foundry,SOI,FDSOI,MEMS,SiPh,CNT,3Dpackaging,superconductingICs D-WaveSystems[290] SuperconductingFoundry[291] QuantumProcessingUnits(QPUs)[291] GlobalFoundries(formerlyAMD) Fab1Module1[292] Germany,Saxony,Dresden 3.6[1] 2005 300 22–45 35,000[1] Foundry,SOI,FDSOI GlobalFoundries(formerlyAMD) Fab1Module2 Germany,Saxony,Dresden 4.9[1] 1999 300 22–45 25,000[1] Foundry,SOI GlobalFoundries Fab1Module3 Germany,Saxony,Dresden 2.3[1] 2011[1] 300 22–45 6,000[1] Foundry,SOI GlobalFoundries(formerlyChartered) Fab2[212] Singapore 1.3[1] 1995[1] 200 350–600 56,000[1] Foundry,SOI GlobalFoundries(formerlyChartered) Fab3/5[212] Singapore 0.915,1.2[1] 1997,1995[1] 200 180–350 54,000 Foundry,SOI GlobalFoundries(formerlyChartered) Fab6[212](mergedintoFab7) Singapore 1.4[1] 2000[1] 200,300(merged) 110–180 45,000 Foundry,SOI GlobalFoundries(formerlyChartered) Fab7[292] Singapore 4.6[1] 2005[1] 300 40,65,90,110,130 50,000 Foundry,BulkCMOS,RFSOI GlobalFoundries Fab8[292] USA,NewYork,Malta 4.6,2.1,13+(total)[293][294] 2012,2014[1] 300 12/14/22/28 60,000 Foundry,High-KMetalGate,[295]SOIFinFET GlobalFoundries TechnologyDevelopmentCenter[1] USA,NewYork,Malta 1.5[1] 2014[1] GlobalFoundries(formerlyIBM) Fab9 USA,Vermont,EssexJunction 200 90–350 40,000 Foundry,SiGe,RFSOI (futureONSemiconductor)GlobalFoundries(formerlyIBM)[296][297][298] Fab10 USA,NewYork,East Fishkill 2.5,+.29(future)[293] 2002 300 90–22,14 12,000-15,000[293] Foundry,RFSOI,SOIFinFET(former),SiGe,SiPh SUNYPolyCNSE NanoFab300North[299] USA,NewYork,Albany .175,.050 2004,2005 300 65,45,32,22 SUNYPolyCNSE NanoFab200[300] USA,NewYork,Albany .016 1997 200 SUNYPolyCNSE NanoFabCentral[299] USA,NewYork,Albany .150 2009 300 22 SkorpiosTechnologies(formerlyNovati)(formerlyATDF)(formerlySEMATECH) USA,Texas,Austin[1][301] 0.065 1989[1] 200 10,000 MEMS,photonics,foundry OptoDiode USA,California,Camarillo[302] OptekTechnology[61] 1968 100,150 GaAs,LEDs II-VI(formerlyOclaro)(formerlyBookham)(formerlyNORTHERNTELECOMSEMICONDUCTOR NORTHERNTELECOMEUROPE[61])(formerlyJDSUniphase)(formerlyUniphase) SemiconductorLasers,Photodiodes Infinera USA,California,Sunnyvale[303][304] RogueValleyMicrodevices[305][306][307] USA,Oregon,Medford 2003 50.8mmto300mm MEMSFoundry,ThinFilmsFoundry,SiliconWafers,WaferServices,MEMSR&D Atomica Fab1 USA,California,Goleta 2000 150,200 350 20,000 Foundry:MEMS,Photonics,Sensors,Biochips Sensera uDev-1 USA,Massachusetts,Woburn 2014 150 700 1,000 MEMS,MicroDeviceassembly RigettiComputing Fab-1[308][309][310] USA,California,Fremont 130 QuantumProcessors NHancedSemiconductors[311] MNC USA,NorthCarolina,Morrisville 2001 100,150,200 >=500 1000 MEMS,SiliconSensors,BEoL,2.5/3Dandadvancedpackaging PolarSemiconductor[312] FAB1,2,3 USA,Minnesota,Bloomington 200 BCD,HV,GMR OrbitSemiconductor[61] 100 CCD,CMOS Entrepix USA,Arizona,Tempe[1] 2003[1] Medtronic USA,Arizona,Tempe[1] 1973[1] TechnologiesandDevicesInternational USA,Florida,SilverSprings[1] 2002[1] SoraaInc USA,California[313][314] SoraaLaserDiode[313] MirrorcleTechnologies USA,California,Richmond[315] HTELABS HTELABS USA,California,SanJose 0.005 2009 100,150 4000–1000 1,000 PurePlayWaferFoundry-BIPOLAR,BICMOS,CMOS,MEMSwww.htelabs.com HTMicron Brazil,RioGrandedoSul,SãoLeopoldo 2014 DRAM,eMCP,iMCP UnitecdoBrasil Brazil,MinasGerais,RibeirãodasNeves Planned UnitecBlue[316] Argentina,BuenosAiresProvince,Chascomús 0.3(1.2planned)[317] 2013 RFID,SIM,EMV Everlight Yuan-LiPlant Taiwan,Miao-Li LEDs Everlight Pan-YuPlant China LEDs Everlight Tu-ChengPlant Taiwan,TaipeiCountry LEDs Optotech[318] Taiwan,Hsinchu LEDs ArimaOptoelectronics Taiwan,Hsinchu[1] 1999[1] EpisilSemiconductor Taiwan,Hsinchu[1] 1992,1990,1988[1] EpisilSemiconductor Taiwan,Hsinchu[1] 1992,1990,1988[1] CreativeSensorInc.[319][320] NanChangCreativeSensor China,Jiangxi 2007 ImageSensors CreativeSensorInc.[319] WuxiCreativeSensor China,JiangSu 2002 CreativeSensorInc.[319] WuxiCreativeSensor Taiwan,TaipeiCity 1998 ViseraTechnologies[321] HeadquartersPhaseI Taiwan,HsinchuScience-basedIndustrialPark 2007,September CMOSImageSensors Panjit Taiwan,Kaohsiung[1] 0.1 2003[1] NanosystemFabricationFacility HongKong[322] ASMC[323] FAB1/2 China,Shanghai 1992,1997[1] 200 600 78,000[1] BCD,HV ASMC[323] FAB3 China,Shanghai 2004[1] 200 250 12,000[1] Beilling[324] China,Shanghai 150 1200 BiCMOS,CMOS SiSemi[325] China,Shenzhen,LonggangHigh-techIndustrialPark[326] 2004 130 Powersemiconductors,LEDdrivers,bipolarpowertransistors,powerMOSFETs SiSemi[326] 1997 100 Transistors CRMicro(formerlyCSMC)[327] Fab1 1998[1] 150[328] 60,000[1] HVAnalog,MEMS,Power,Analog,Foundry CRMicro(formerlyCSMC) Fab2 China,Wuxi 2008[1] 200[328] 180,130 40,000[1] HVAnalog,Foundry CRMicro(formerlyCSMC) Fab3 1995[1] 200[328] 130 20,000[1] CRMicro(formerlyCSMC) Fab5 2005[1] 30,000[1] HuaHongSemiconductor(ShanghaiHuali-HLMC) HHFab5 China,Shanghai,Zhangjiang 300 65/55-28 35,000 Foundry HuaHongSemiconductor(ShanghaiHuali-HLMC) HHFab6 China,Shanghai,Kangqiao 300 28/22-14 40,000 Nexchip[9] N1[329] China,Hefei Q42017 300 40,000 DisplayDriversIC[330] Nexchip[9] N2[329] China,Hefei Underconstruction 300 40,000 Nexchip[9] N3[329] China,Hefei Underconstruction 300 40,000 Nexchip[9] N4[329] China,Hefei Underconstruction 300 40,000 Wandai[9] CQ China,Chongqing Underconstruction 300 20,000 San'anOptoelectronics TianjinSan'anOptoelectronicsCo.,Ltd. China,Tianjin LEDs San'anOptoelectronics XiamenSan'anOptoelectronicsTechnologyCo.,Ltd. China LEDs San'anOptoelectronics XiamenSan'anIntegratedCircuit China ICs San'anOptoelectronics XiamenSan'anOptoelectronicsCo.,Ltd. China LEDs San'anOptoelectronics FujianJing'anOptoelectronicsCo.,Ltd. China LEDs San'anOptoelectronics WuhuAnruiOptoelectronicsCo.,Ltd. China LEDs San'anOptoelectronics AnruiSan'anOptoelectronicsCo.,Ltd. China LEDs San'anOptoelectronics AnruiSan'anTechnologyCo.,Ltd. China LEDs San'anOptoelectronics LuminusSummary USA LEDs San'an[331] China,Xiamen Foundry,GaN,Power,RF HuaHongSemiconductor HHFab7 China,Wuxi 300 90-55 60,000[332] Foundry HuaHongSemiconductor HHFab1 China,Shanghai,Jinqiao 200 95 65,000[332] Foundry,eNVM,RF,MixedSignal,Logic,PowerManagement,PowerDiscrete HuaHongSemiconductor HHFab2 China,Shanghai,Zhangjiang 200 180 60,000[332] Foundry,eNVM,RF,MixedSignal,Logic,PowerManagement,PowerDiscrete HuaHongSemiconductor HHFab3 China,Shanghai,Zhangjiang 200 90 53,000[332] Foundry,eNVM,RF,MixedSignal,Logic,PowerManagement,PowerDiscrete HuaLeiOptoelectronic China LEDs[333] SinoKingTechnology[8] China,Hefei 2017 DRAM APTElectronics China,Guangzhou[1] 2006[1] Aqualite China,Guangzhou[1] 2006[1] Aqualite China,Wuhan[1] 2008[1] XiamenJaysunSemiconductorManufacturing Fab101 China,Xiamen[1] 0.035 2011[1] XiyueElectronicsTechnology Fab1 China,Xian[1] 0.096 2007[1] HankingElectronics Fab1 China,Fushun 2018 200 10,000-30,000 MEMSFoundry, MEMSDesign MEMSSensors(Inertial,Pressure,Ultrasound,Piezoelectric,LiDar,Bolometer) IoTMotionSensors CanSemi[334] China,Guangzhou 4 300 180–130 Foundry[335] SensFab Singapore[1] 1995[1] MIMOSSemiconductor Malaysia,KualaLumpur[1] 0.006,0.135 1997,2002[1] SilterraMalaysia Fab1 Malaysia,Kedah,Kulim 1.6 2000 200 250,200,180–90 46,000 CMOS,HV,MEMS,RF,Logic,Analog,MixSignal PyongyangSemiconductorFactory 111Factory NorthKorea,Pyongyang 1980s 3000[336] DongbuHiTek Fab1 SouthKorea,Bucheon[1] 1997[1] Foundry DongbuHiTek Fab2 SouthKorea,Eumsung-Kun[1] 2001[1] Foundry DongbuHiTek Fab2Module2 SouthKorea,Eumsung-Kun[1] Foundry KodenshiAUKGroup[337] SiliconFABLine KodenshiAUKGroup[337] CompoundFABLine Kyocera SAWdevices[139] SeikoInstruments[338] China,Shanghai SeikoInstruments[338] Japan,Akita SeikoInstruments[338] Japan,Takatsuka NIPPONPRECISIONCIRCUITS[61] Digital Epson[339] Twing Japan,Sakata 1997 200 150–350 25,000 Epson[339] Swing Japan,Sakata 1991 150 350–1200 20,000 OlympusCorporation[340] Nagano Japan,NaganoPrefecture MEMS[341] Olympus Japan MEMS[342] ShindengenElectricManufacturing[343] Philippines,Laguna,Calamba ShindengenElectricManufacturing[343] Thailand,Lamphun NKKJFEHoldings[61] 200 6000 , NewJapanRadio KawagoeWorks Japan,SaitamaPrefecture,FujiminoCity[344][345] 1959[61] 100,150 4000,400,350 Bipolar,MixedSignal,Analog,HiSpeedBiCMOS,BCD,40VHiSpeedComplementaryBipolar,AnalogCMOS+HV, SAWFilters[346] NewJapanRadio SagaElectronics[347] Japan,SagaPrefecture 100,150 4000,400,350[348] Foundry,Bipolar,MixedSignal,Analog,HiSpeedBiCMOS,BCD,40VHiSpeedComplementaryBipolar,AnalogCMOS+HV, SAWFilters[346] NewJapanRadio NJRFUKUOKA Japan,FukuokaPrefecture,FukuokaCity[347] 2003[349] 100,150 Bipolar,AnalogICs,MOSFETsLSI,BiCMOSICs NewJapanRadio Japan,Nagano,NaganoCity[350] NewJapanRadio Japan,Nagano,UedaCity[350] Nichia YOKOHAMATECHNOLOGYCENTER[351] Japan,KANAGAWA LEDs Nichia SUWATECHNOLOGYCENTER[351] Japan,NAGANO LEDs AKMSemiconductor,Inc. FAB1 Japan,Nobeoka Sensors AKMSemiconductor,Inc. FAB2 Japan,Nobeoka AKMSemiconductor,Inc. FAB3 Japan,Fuji Sensors AKMSemiconductor,Inc. FABFP Japan,Hyuga AKMSemiconductor,Inc. FAB5 Japan,Ishinomaki LSI TaiyoYuden Japan,Nagano SAWdevices[139] TaiyoYuden Japan,Ome SAWdevices[139] NMBSEMICONDUCTOR[61] DRAM ElmosSemiconductor Germany,NorthRhine-Westphalia,Dortmund[352] 1984 200 800,350 9000 HV-CMOS UnitedMonolithicSemiconductors[353] Germany,Baden-Württemberg,Ulm 100 700,250,150,100 Foundry,FEOL,MMIC,GaAspHEMT,InGaP,GaNHEMT,MESFET,Schottkydiode UnitedMonolithicSemiconductors[353] France,Île-de-France,Villebon-sur-Yvette 100 Foundry,BEOL InnovativeIonImplant France,Provence-Alpes-Côted'Azur,Peynier 51–300[354] InnovativeIonImplant UK,Scotland,Bathgate 51–300[354] nanoPHAB Netherlands,NorthBrabant,Eindhoven 50–100 10–50 2–10 MEMS MicronSemiconductorLtd.[355] Lancing UK,England,WestSussex,Lancing Detectors PragmatICSemiconductor FlexLogIC001 UK,England,Durham 0.020 2018 200 Helvellyn 4,000 FlexibleSemiconductor/ FoundryandIDM PragmatICSemiconductor FlexLogIC002 UK,England,Durham 0.050 2023 300 Helvellyn 15,000 FlexibleSemiconductor/ FoundryandIDM INEXMicrotechnology UK,England,Northumberland,NewcastleuponTyne 2014 150 Foundry CSTG UK,Scotland,Glasgow[1][356] 2003[1] 76,100 InP,GaAs,AlAs,AlAsSb,GaSb,GaN,InGaN,AlN,diodes,LEDs,lasers,PICs,Opticalamplifiers,Foundry Photonix UK,Scotland,Glasgow[1] 0.011 2000[1] SilexMicrosystems Sweden,StockholmCounty,Järfälla[1] 0.009,0.032 2003,2009[1] Integral Belarus,Minsk 1963 100,150,200 2000,1500,350 CrocusNanoElectronics CNE Russia,Moscow 2015 300 65 4000 MRAM,RRAM,MEMS,IPD,TMR,GMRSensors,foundry Mikron Russia,Moscow,Zelenograd 65–180 VSPMikron WaferFab[357] Russia,VoronezhOblast,Voronezh 1959 100/150 900+ 6000 Analog,power Semikron NbgFab Germany,Nuremberg 1984 150 3500 70000 Bipolar,PowerSemiconductors Numberofopenfabscurrentlylistedhere:536 (NOTE:SomefabslocatedinAsiadon'tusethenumber4,orany2digitnumberthataddsupto4,becauseitisconsideredbadluck;seetetraphobia.) Closedplants[edit] Company PlantName PlantLocation PlantCost(inUS$Billions) StartedProduction WaferSize(mm) ProcessTechnologyNode(nm) ProductionCapacity(Wafers/Month) Technology/Products EndedProduction SovietUnion Jupiter Ukraine,KievOblast,Pripiat 1980 SecretgovernmentsemiconductorfabclosedbyChernobyldisaster 1996 Latvia VEF Latvia,Riga 1960 Semi-secretgovernmentsemiconductorfabandamajorresearchcenterclosedbythecollapseoftheUSSRtoseparateLatviafromtheRussianmilitarymanufacturingcomplex. 1999 TowerSemiconductor(formerlyMicron) Fab4[358] Japan,Hyōgo,Nishiwaki 0.450[1] 1992[1] 200 95 60,000[1] DRAM,foundry 2014 TowerSemiconductor-Tacoma China,Jiangsu,Nanjing[359][360] halted,bankruptcyinJune2020[361] 200,300(planned) Foundry 2020 FujianJinhua(JHICC)[9][362][363][364] F2 China,Fujian,Jinjiang 5.65[365] 2018(planned) 300 22 60,000 DRAM[8] 2018 Decoma[9] F2 China,Jiangsu,Huai'an Underconstruction 300 20,000 2020 WuhanHongxinSemiconductorManufacturing(HSMC)[366] China,Hubei,Wuhan 2019(halted) 300 14,7 Foundry 2020 TsinghuaUnigroup-UnigroupGuoxin(Unigroup,Xi'anUniICSemiconductorsCo.,Ltd.)[9] SZ China,Guangdong,Shenzhen 12.5 Planned 300 50,000 DRAM 2019(justplan) TSMC Fab1[214] TaiwanHsinchu,Baoshan 1987 150 20,000 Foundry March9,2001 UMC Fab1 Japan,Chiba,Tateyama 0.543[1] 1997[1] 200 40,000 Foundry 2012 SKHynix E-4 USA,Oregon,Eugene 1.3 2007 200 30,000 DRAM 2008[367] Symetrix-Panasonic[368] Brazil 0.9(planned) planned FeRAM (justplan) Rohm(formerlyDataGeneral) USA,California,Sunnyvale[369] Kioxia Fab1(atYokkaichiOperations)[370] Japan,Mie,Yokkaichi 1992 200 400 35,000 SRAM,DRAM September,2001 NEC Livingston[371] UnitedKingdom,Scotland,WestLothian,Livingston 4.5(total) 1981 200 250,180 30,000 DRAM April2001 LFoundry [de](formerlyRenesasElectronics)[372] Germany,Bavaria,Landshut 1992 200 2011 LFoundry [de](formerlyAtmel)[373] France,Bouches-du-Rhône,Rousset ? 200 25.000[374] Atmel(formerlySiemens) Fab9[375] UnitedKingdom,TyneandWear,NorthTyneside 1.53[376] 1998[377] DRAM[377] 2007[378] EINiš EiPoluprovodnici Serbia,Nišava,Niš 1962 100 2000 PlesseySemiconductors(formerlyPlusSemi)(formerlyMHSElectronics)(formerlyZarlink)(formerlyMitel)(formerlyPlesseySemiconductors) UK,Wiltshire,Swindon[1] TelefunkenSemiconductors [de] Heilbronn,HNO-Line Germany,Baden-Württemberg,Heilbronn 0.125[1] 1993[1] 150 10,000 2015 Qimonda Richmond[379] USA,Virginia,Richmond 3 2005 300 65 38,000 DRAM January,2009 STMicroelectronics(formerlyNortel[61]) 100,150 NMOS,CMOS FreescaleSemiconductor(formerlyMotorola) ToulouseFab[380] France,Haute-Garonne,Toulouse 1969 150 650 Automotive 2012[381] FreescaleSemiconductor(formerlyMotorola)(formerlyTohokuSemiconductor) SendaiFab[382] Japan,Miyagi,Sendai 1987 150,200 500 DRAM,microcontrollers,analog,sensors 2009? Agere(formerlyLucent)(formerlyAT&T)[383] Spain,Madrid,TresCantos 0.67[384] 1987[385] 300,350,500 CMOS 2001 GMTMicroelectronics(formerlyCommodoreSemiconductor)(formerlyMOSTechnology) USA,Pennsylvania,Audubon 196919761995 1000 19761992[386]2001 IntegratedDeviceTechnology USA,California,Salinas 1985 150 350–800[131] 2002 ONSemiconductor(formerlyCherrySemiconductor) USA,RhodeIsland,Cranston 2004 Intel Fab8[38] Israel,JerusalemDistrict,Jerusalem 1985 150 Microprocessors,Chipsets,Microcontrollers[39] 2007 Intel FabD2 USA,California,SantaClara 1989 200 130 8,000 Microprocessors,Chipsets,Flashmemory 2009 Intel Fab17[29][28] USA,Massachusetts,Hudson 1998 200 130 Chipsetsandother[28] 2014 FairchildSemiconductor(formerlyNationalSemiconductor) WestJordan USA,Utah,WestJordan 1977 150 2015[387] TexasInstruments HFAB USA,Texas,Houston 1967 150 2013[388] TexasInstruments(formerlySiliconSystems) SantaCruz USA,California,SantaCruz 0.250 1980 150 800 80,000 HDD 2001 TexasInstruments(formerlyNationalSemiconductor) Arlington USA,Texas,Arlington 1985 150 80000,35000 2010 Unknown(fortune500company) USA,EastCoast[389] 150 1,600 MEMS 2016 DiodesIncorporated(formerlyLite-OnPowerSemiconductor)(formerlyAT&T) KFAB USA,Missouri,Lee'sSummit 1994[390] 130 2017[391] Qorvo(formerlyTriQuintSemiconductor)(formerlySawtek) USA,Florida,Apopka[53][392] SAWfilters 2019 GlobalFoundries AbuDhabi[1] UAE,EmirateofAbuDhabi,AbuDhabi[1] 6.8[1](planned) 2016[1](planned) 300 110–180 45,000 Foundry 2011(planstopped) GlobalFoundries-Chengdu China,Sichuan,Chengdu[393] 10(planned) 2018(planned),2019(secondphase) 300 180/130(cancelled),22(secondphase) 20,000(85,000planned) Foundry,FDSOI(secondphase) 2020(wasidle) TondiElektroonika[394] A-1381 SovietUnion,Estonia,Harju,Tallinn 1958 Radioequipment,Transisors,Photodiode 1978 Intersil(formerlyHarrisSemiconductor,formerlyGE,formerlyRCA) USA,Ohio,Findlay 1954 Semiconductors,Optoelectronics,IntegratedCircuits,Research[395] 2003[396] 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